Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3

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	Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3
	Tanaka, Y ; Nakayama, K ; Souma, S ; Sato, T ; Xu, N ; Zhang, P ; Richard, P ; Ding, H ; Suzuki, Y ; Das, P ; Kadowaki, K ; Takahashi, T
刊名	PHYSICAL REVIEW B
	2012
卷号	85 期号:12
关键词	SURFACE-STATES SPIN
ISSN号	1098-0121
通讯作者	Tanaka, Y: Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan.
中文摘要	We have performed angle-resolved photoemission spectroscopy of CuxBi2Se3 as a function of Cu doping (x = 0.0-0.25) to investigate the doping-induced evolution of the electronic structure. We found that the topological surface state is preserved even in the heavy-doping region (x = 0.25), indicative of the robustness of the surface state against doping and impurities. The estimated carrier concentration is far smaller than that expected from a simple intercalation picture, and saturates at x similar to 0.1 where superconductivity emerges. This indicates that the carrier concentration responsible for superconductivity is dominated by a subtle balance between two competing processes of electron and hole doping.
收录类别	SCI
资助信息	JST-CREST; JSPS; MEXT of Japan; MOST; CAS; NSFC of China; University of Wisconsin-Madison
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37637]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tanaka, Y,Nakayama, K,Souma, S,et al. Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3[J]. PHYSICAL REVIEW B,2012,85(12).
APA	Tanaka, Y.,Nakayama, K.,Souma, S.,Sato, T.,Xu, N.,...&Takahashi, T.(2012).Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3.PHYSICAL REVIEW B,85(12).
MLA	Tanaka, Y,et al."Evolution of electronic structure upon Cu doping in the topological insulator Bi2Se3".PHYSICAL REVIEW B 85.12(2012).