Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond

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	Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond
	Wu, KH ; Wang, EG ; Qing, J ; Xu, GC
刊名	JOURNAL OF APPLIED PHYSICS
	1998
卷号	83 期号:3 页码:1702
关键词	THIN-FILMS C-N
ISSN号	0021-8979
通讯作者	Wu, KH: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Carbon nitride films were prepared using an electron cyclotron resonance enhanced chemical vapor deposition apparatus. A two-step mode was adopted in which a diamond layer was first deposited onto the substrate (Si or Mo), and then the carbon nitride films were grown. Detailed x-ray photoelectron analyses show that the carbon and nitrogen atoms have formed a nonpolar covalent bond. The nitrogen concentrations in the films remain unchanged when the substrate temperatures vary from 100 to 700 degrees C, which suggests that a stable phase has formed. (C) 1998 American Institute of Physics. [S0021-8979(98)04003-1].
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37063]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wu, KH,Wang, EG,Qing, J,et al. Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond[J]. JOURNAL OF APPLIED PHYSICS,1998,83(3):1702.
APA	Wu, KH,Wang, EG,Qing, J,&Xu, GC.(1998).Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond.JOURNAL OF APPLIED PHYSICS,83(3),1702.
MLA	Wu, KH,et al."Electron cyclotron resonance assisted chemical vapor deposition of carbon nitride films on diamond".JOURNAL OF APPLIED PHYSICS 83.3(1998):1702.