Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

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	Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
	Ai, B ; Shen, H ; Liang, ZC ; Chen, Z ; Kong, GL ; Liao, XB
刊名	THIN SOLID FILMS
	2006
卷号	497 期号:1-2 页码:157
关键词	GRAIN-BOUNDARIES STATES
ISSN号	0040-6090
通讯作者	Ai, B: Sun Yat Sen Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China.
中文摘要	In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36944]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ai, B,Shen, H,Liang, ZC,et al. Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[J]. THIN SOLID FILMS,2006,497(1-2):157.
APA	Ai, B,Shen, H,Liang, ZC,Chen, Z,Kong, GL,&Liao, XB.(2006).Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition.THIN SOLID FILMS,497(1-2),157.
MLA	Ai, B,et al."Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition".THIN SOLID FILMS 497.1-2(2006):157.