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Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films
Liu, ZY ; Zhang, PJ ; Meng, Y ; Tian, HF ; Li, JQ ; Pan, XY ; Liang, XJ ; Chen, DM ; Zhao, HW
刊名APPLIED PHYSICS LETTERS
2012
卷号100期号:14
关键词MEMORIES DEVICES
ISSN号0003-6951
通讯作者Liu, ZY: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要The influence of interfacial structure on the resistance switching behavior of Ta/Pr0.7Ca0.3MnO3/Pt films was investigated by varying the reactive Ta electrode thickness. Structure and component analyses revealed that a TaOx layer formed at the interface and its thickness increased with the Ta thickness in the thin region while staying the same in the thick region. The similar thickness dependences of the negative differential resistance and resistance switching characteristics were observed and interpreted by the TaOx thickness dependent oxidization and reduction reaction across the interfacial region. This study demonstrates that the resistance switching characteristics could be improved by suitable interfacial engineering. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700806]
收录类别SCI
资助信息National Basic Research Program of China [2009CB930803]; Chinese Academy of Sciences [KJCX2-YW-W24]; National Science Foundation of China [10834012]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/36582]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, ZY,Zhang, PJ,Meng, Y,et al. Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films[J]. APPLIED PHYSICS LETTERS,2012,100(14).
APA Liu, ZY.,Zhang, PJ.,Meng, Y.,Tian, HF.,Li, JQ.,...&Zhao, HW.(2012).Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films.APPLIED PHYSICS LETTERS,100(14).
MLA Liu, ZY,et al."Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films".APPLIED PHYSICS LETTERS 100.14(2012).
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