Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN

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	Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN
	Peng, MZ ; Guo, LW ; Zhang, J ; Yu, NS ; Zhu, XL ; Yan, JF ; Wang, Y ; Jia, HQ ; Chen, H ; Zhou, JM
刊名	JOURNAL OF CRYSTAL GROWTH
	2007
卷号	307 期号:2 页码:289
ISSN号	0022-0248
中文摘要	The interface formation, electrical properties and the surface morphology of multilayered Ta/Ni/Ta/SiC contacts were reported in this study. It was found that the conducting behavior of the contacts so fabricated is much dependent on the metal layer thickness and the subsequent annealing temperature. Auger electron spectroscopy (AES) and X-ray diffraction analyses revealed that Ni2Si and TaC formed as a result of the annealing. The Ni atoms diffused downward to metal/SiC interface and converted into Ni2Si layer in adjacent to the SiC substrate. The released carbon atoms reacted with Ta atoms to form TaC layer. Ohmic contacts with specific contact resistivity as low as 3 x 10(-4) Omega cm(2) have been achieved after thermal annealing. The formation of carbon vacancies at the Ni2Si/SiC interface, probably created by dissociation of SiC and formation of TAC during thermal annealing, should be responsible for the ohmic formation of the annealed Ta/Ni/Ta contacts. The addition of Ta into the Ni metallization scheme to n-SiC restricted the accumulation of carbon atoms left behind during Ni2Si formation, improving the electrical and microstructure properties. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36443]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Peng, MZ,Guo, LW,Zhang, J,et al. Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN[J]. JOURNAL OF CRYSTAL GROWTH,2007,307(2):289.
APA	Peng, MZ.,Guo, LW.,Zhang, J.,Yu, NS.,Zhu, XL.,...&Zhou, JM.(2007).Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN.JOURNAL OF CRYSTAL GROWTH,307(2),289.
MLA	Peng, MZ,et al."Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN".JOURNAL OF CRYSTAL GROWTH 307.2(2007):289.