Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

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	Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics
	Zeng, QS ; Wang, S ; Yang, LJ ; Wang, ZX ; Zhang, ZY ; Peng, LM ; Zhou, WY ; Xie, SS
刊名	NANO RESEARCH
	2012
卷号	5 期号:1 页码:33
关键词	FIELD-EFFECT TRANSISTORS BIPOLAR DIODE SOLAR-CELLS TRANSPARENT CIRCUITS GENERATION NETWORKS
ISSN号	1998-0124
通讯作者	Wang, S: Peking Univ, Key Lab Phys & Chem Nanodevices, Dept Elect, Beijing 100871, Peoples R China.
中文摘要	Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 mu m or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p-type transfer characteristics, with a large current ON/OFF ratio of more than 10(4) when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO(2), which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm(2), the device resulted in an open circuit voltage V (OC) = 0.21 V and a short circuit current I (SC) = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.
收录类别	SCI
资助信息	Ministry of Science and Technology [2011CB933002, 2011CB933001, 2012CB932302]; Fundamental Research Funds for the Central Universities; National Science Foundation of China [61071013, 61001016, 51072006, 60971003, 90921012, 51172271]; Beijing Municipal Education Commission [YB20108000101]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/36204]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zeng, QS,Wang, S,Yang, LJ,et al. Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics[J]. NANO RESEARCH,2012,5(1):33.
APA	Zeng, QS.,Wang, S.,Yang, LJ.,Wang, ZX.,Zhang, ZY.,...&Xie, SS.(2012).Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics.NANO RESEARCH,5(1),33.
MLA	Zeng, QS,et al."Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics".NANO RESEARCH 5.1(2012):33.