Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties

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	Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties
	Ji, AL ; Yun, D ; Gao, L ; Cao, ZX
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2010
卷号	207 期号:12 页码:2769
关键词	COPPER NITRIDE FILMS THERMAL-STABILITY ELECTRONIC-STRUCTURE RECORDING MEDIA DEPOSITION SILVER MECHANISM TIN
ISSN号	1862-6300
通讯作者	Cao, ZX: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要	The growth of stoichiometric samples of thermally unstable noble-metal nitrides remains a challenge. Thin films of nearly stoichiometric Cu3N have been successfully grown on Si (100) wafers by reactive magnetron sputtering of Cu target with mixed nitrogen and argon. The controversies regarding bandgap, lattice constant, decomposition temperature, room-temperature electrical resistivity, etc., can be resolved. Nitrogen re-emission leads to the formation of Cu3N nanocrystallites, generally 40-60 nm in size, enclosed by Cu-terminated {111} facets. Samples with a slight Cu excess may turn into a metallic conductor with excellent electrical conductivity via a percolation mechanism. Unfavorable growth conditions may give rise to blistering or even mesocaled fivefold symmetrical relief structures in the deposit. These structures result from the rearrangement of nanocrystals via gliding along the {111} facets. Ternary Cu3NMx (M = Pd, Cu, In, Zn, etc.) compounds, with the excessive metal atoms occupying the cell centers of the Cu3N lattice, can be obtained by cosputtering under similar conditions. Such ternary compounds can easily be made metallic. In Cu3NPd0.238 a constant electrical resistivity was measured in a temperature range similar to 200 K. Incorporation of In or O atoms may raise the decomposition temperature but not to more than 400 degrees C if the decomposition products are required to be as good a conductor as Cu. The present results might be relevant for growing films of thermally unstable materials. The peculiar electrical conduction behavior in the Cu3NMx structures is expected to inspire the search for nearly zero-band materials similar to Cu3NPd0.238 as well as to promote an indepth exploration of potential applications of these materials.
收录类别	SCI
资助信息	National Natural Science Foundation of China [10904165, 60621091, 10974227]; Chinese Academy of Sciences [KGCX2-YW-360, KJCX2-YW-M07]; National Basic Research Program of China [2009CB930801, 2009AA033101]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35426]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Ji, AL,Yun, D,Gao, L,et al. Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2010,207(12):2769.
APA	Ji, AL,Yun, D,Gao, L,&Cao, ZX.(2010).Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,207(12),2769.
MLA	Ji, AL,et al."Crystalline thin films of stoichiometric Cu3N and intercalated Cu3NMx (M = metals): Growth and physical properties".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 207.12(2010):2769.