Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate

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	Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate
	Zhang, SH ; Wang, L ; Shi, ZW ; Tian, HT ; Gao, HJ ; Wang, WX ; Chen, H ; Li, HT ; Zhao, LC
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	100 期号:25
关键词	MOLECULAR-BEAM EPITAXY 1.3 MU-M SURFACE NANOSTRUCTURES LASER RINGS SIZE
ISSN号	0003-6951
通讯作者	Wang, L: Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Effect of GaSb/InGaAs quantum dots (QDs) morphology and In composition in InGaAs interlayer on the optical properties of GaSb/InGaAs QD material system was studied in this work. The interband transition of GaSb QD and type-II transition from the InGaAs conduction band to the GaSb hole level were observed. It was found that both QD morphology and In composition in InGaAs interlayer had an influence on the optical properties of GaSb/InGaAs QD material system. Note that the linear relationship exists between In composition in InGaAs interlayer and photoluminescence peak positions, which indicates the structural characteristics of the InGaAs matrix can be used as an important tool to adjust the optical properties of GaSb/InGaAs QD material system. This experimental result shows that the optical properties of GaSb/InGaAs type-II QD material system can be more precisely controlled than the widely studied GaSb/GaAs QD material system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729939]
收录类别	SCI
资助信息	Natural Science Foundation of China [10874212, 61106013]; National High Technology Research and Development Program of China [2009AA033101]; National Basic Research Program of China [2010-CB327501, 2011CB925604]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35142]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, SH,Wang, L,Shi, ZW,et al. Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate[J]. APPLIED PHYSICS LETTERS,2012,100(25).
APA	Zhang, SH.,Wang, L.,Shi, ZW.,Tian, HT.,Gao, HJ.,...&Zhao, LC.(2012).Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate.APPLIED PHYSICS LETTERS,100(25).
MLA	Zhang, SH,et al."Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate".APPLIED PHYSICS LETTERS 100.25(2012).