Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method

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	Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method
	Li, YL ; Li, JJ ; Wang, Q ; Yang, Y ; Gu, CZ
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2009
卷号	9 期号:2 页码:1062
关键词	ION-BOMBARDMENT FIELD-EMISSION NUCLEATION SUBSTRATE HYDROGEN BIAS CVD
ISSN号	1533-4880
通讯作者	Li, JJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China.
中文摘要	Nanocrystalline diamond (NCD) films are deposited on Si wafer by using bias-assisted hot-filament chemical vapor deposition (HFCVD) method. The average grain size was controllable by varying CH, concentration. The scanning electron microscopy (SEM), Raman scattering spectroscopy and X-ray diffraction (XRD) were used to investigate the morphology, phase purity, and crystallinity of NCD films, respectively. Furthermore, we found that the morphological evolving of NCD films was corresponding to the variation of bias current, which might have close relation to thermal field electrons emission from NCD films at high temperature during the growth process, and then the related mechanism was discussed.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35114]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, YL,Li, JJ,Wang, Q,et al. Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2009,9(2):1062.
APA	Li, YL,Li, JJ,Wang, Q,Yang, Y,&Gu, CZ.(2009).Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,9(2),1062.
MLA	Li, YL,et al."Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 9.2(2009):1062.