Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry

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	Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry
	Liu, R ; Wee, ATS ; Shen, DH ; Takenaka, H
刊名	SURFACE AND INTERFACE ANALYSIS
	2004
卷号	36 期号:2 页码:172
关键词	SAMPLE ROTATION
ISSN号	0142-2421
通讯作者	Liu, R: Natl Univ Singapore, Dept Phys, Lower Kent Ridge Rd, Singapore 119260, Singapore.
中文摘要	Achieving a high depth resolution (of the order of 1 nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. Well characterized reference materials are also important in accurate quantitative analysis of doping profiles. International Standard Organization (ISO)/Technique Commission (TC201)/Surface Chemical Analysis (SC6-SIMS) committees are engaged in the development of the international standardization of depth profiling of dopants in silicon using secondary ion mass spectrometry (SIMS). In this paper, the low-energy primary ion O-2(+) is employed in SIMS depth profiling of BN delta-doped Si samples grown by magnetron sputtering to achieve high depth resolution and minimize the surface roughening. The B-11(+) and Si-30(+) yields were monitored in the depth profiles. Profiling using a 0.5 keV energy O-2(+) beam is complicated by the early onset of surface roughening. The effects of oxygen flooding and sample rotation, used to suppress surface roughening, are also investigated. For analysis of the topography of the samples an atomic force microscope has been used. Copyright (C) 2004 John Wiley Sons, Ltd.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34629]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, R,Wee, ATS,Shen, DH,et al. Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry[J]. SURFACE AND INTERFACE ANALYSIS,2004,36(2):172.
APA	Liu, R,Wee, ATS,Shen, DH,&Takenaka, H.(2004).Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry.SURFACE AND INTERFACE ANALYSIS,36(2),172.
MLA	Liu, R,et al."Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry".SURFACE AND INTERFACE ANALYSIS 36.2(2004):172.