3-DIMENSIONAL ORDERED PATTERNS BY LIGHT INTERFERENCE | |
MEI, DB ; CHENG, BY ; HU, W ; LI, ZL ; ZHAN, DH | |
刊名 | OPTICS LETTERS |
1995 | |
卷号 | 20期号:5页码:429 |
关键词 | BINDING GAP |
ISSN号 | 0146-9592 |
通讯作者 | MEI, DB: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
中文摘要 | Formation of yttrium silicides in 170 keV, 4 X 10(17)/cm(2) Y+-implanted (111) Si has been investigated by transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy. A continuous buried YSi2 layer, about 35 nm in thickness, was found to form beneath a 30 nm thick polycrystalline layer. Preferential growth of YSi2 with [001] YSi2 parallel to [111]Si was found to be the dominant mode of YSi2 growth. A high density of twins and stacking faults was observed to distribute in the layer beneath the silicide layer. In samples annealed at 800 degrees C for 1 min, a continuous silicide layer, about 100 nm in thickness, was found to form at the surface of the samples. The YSi2 was found to agglomerate in samples annealed at 1000-1100 degrees C for 1 min. A high density of defects remained beneath the original silicide/Si interface. The silicide maintained the epitaxial relationships with respect to the substrate. No sign of vacancy ordering was detected from examination of diffraction patterns of all as-implanted and annealed samples. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/32769] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | MEI, DB,CHENG, BY,HU, W,et al. 3-DIMENSIONAL ORDERED PATTERNS BY LIGHT INTERFERENCE[J]. OPTICS LETTERS,1995,20(5):429. |
APA | MEI, DB,CHENG, BY,HU, W,LI, ZL,&ZHAN, DH.(1995).3-DIMENSIONAL ORDERED PATTERNS BY LIGHT INTERFERENCE.OPTICS LETTERS,20(5),429. |
MLA | MEI, DB,et al."3-DIMENSIONAL ORDERED PATTERNS BY LIGHT INTERFERENCE".OPTICS LETTERS 20.5(1995):429. |
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