Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte

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	Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte
	Guo LQ(郭立强)
刊名	AIP Advances
	2013-07-11
期号	7 页码:072110-1—072110-9
通讯作者	郭立强
合作状况	李雨桐
中文摘要	Electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte have been fabricated at room temperature. The effects of humidity on performances are investigated. At the relative humidity of 65 %, the measured capacitance is 10 μF/cm2, and the device shows Ion/off ratio of 8.93 × 107, field-effect mobility of 5.9 cm2/Vs. As relative humidity declines, the measured capacitance decreases, which gives rise to the degradation in performance. Especially, at the relative humidity of 0%, the capacitance of 0.01 μF/cm2 is measured, so the device cannot be turned off. The reason may be that humidity can promote H2O molecules to permeate into solid electrolyte, which can cause charges accumulation. C 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9976]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Guo LQ. Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte[J]. AIP Advances,2013(7):072110-1—072110-9.
APA	郭立强.(2013).Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte.AIP Advances(7),072110-1—072110-9.
MLA	郭立强."Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte".AIP Advances .7(2013):072110-1—072110-9.