Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask

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	Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask
	Wan Q(万青) ; Guodong Wu, Jumei Zhou, Hongliang Zhang, Liqiang Zhu, and Qing Wan
刊名	IEEE ELECTRON DEVICE LETTERS
	2012-10-18
卷号	33 期号:12 页码:1720—1722
通讯作者	万青
合作状况	李雨桐
中文摘要	A gradient shadow-mask diffraction method is proposed for the fabrication of junctionless indium–tin–oxide (ITO) and indium–zinc–oxide (IZO) thin-film transistors (TFTs) with different channel thicknesses on one glass substrate during onebatch radio-frequency magnetron sputtering. The operation mode and saturation field-effect mobility of the room-temperatureprocessed oxide-based junctionless TFTs are channel thickness dependent, and the threshold voltages shift from negative to positive when the self-assembled channel thickness is reduced to a critical thickness.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9726]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Guodong Wu, Jumei Zhou, Hongliang Zhang, Liqiang Zhu, and Qing Wan. Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(12):1720—1722.
APA	Wan Q,&Guodong Wu, Jumei Zhou, Hongliang Zhang, Liqiang Zhu, and Qing Wan.(2012).Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask.IEEE ELECTRON DEVICE LETTERS,33(12),1720—1722.
MLA	Wan Q,et al."Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask".IEEE ELECTRON DEVICE LETTERS 33.12(2012):1720—1722.