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	A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching
	Li RW(李润伟) ; Benlin Hu,†,‡ Xiaojian Zhu,†,‡ Xinxin Chen,†,‡ Liang Pan,†,‡ Shanshan Peng,†,‡ Yuanzhao Wu,†,‡ Jie Shang,†,‡ Gang Liu,†,‡ Qing Yan,†,‡ and Run-Wei Li*,†,‡
刊名	Journal of the American Chemical Society
	2012-10-05
期号	134页码:17408—17411
通讯作者	李润伟
合作状况	李雨桐
中文摘要	The uniformity of operating parameters in organic nonvolatile memory devices is very important to avoid false programming and error readout problems. In the present work, we fabricated an organic resistiveswitching memory based on protonic-acid-doped polyazomethine (PA-TsOH), which demonstrates an excellent operative uniformity and multilevel storage capability. The deliberate tuning of the resistance states can be attributed to the electric-field-controlled molecular doping of the imine-containing polymers.
学科主题	磁电子材料与器件
原文出处	其他国内刊物
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9713]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Li RW,Benlin Hu,†,‡ Xiaojian Zhu,†,‡ Xinxin Chen,†,‡ Liang Pan,†,‡ Shanshan Peng,†,‡ Yuanzhao Wu,†,‡ Jie Shang,†,‡ Gang Liu,†,‡ Qing Yan,†,‡ and Run-Wei Li*,†,‡. A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching[J]. Journal of the American Chemical Society,2012(134):17408—17411.
APA	Li RW,&Benlin Hu,†,‡ Xiaojian Zhu,†,‡ Xinxin Chen,†,‡ Liang Pan,†,‡ Shanshan Peng,†,‡ Yuanzhao Wu,†,‡ Jie Shang,†,‡ Gang Liu,†,‡ Qing Yan,†,‡ and Run-Wei Li*,†,‡.(2012).A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching.Journal of the American Chemical Society(134),17408—17411.
MLA	Li RW,et al."A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching".Journal of the American Chemical Society .134(2012):17408—17411.

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