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	Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities
	Cao HT(曹鸿涛) ; Ling Yan Liang,1 Hong Tao Cao,1,a) Xiao Bo Chen,1 Zhi Min Liu,1 Fei Zhuge,1 Hao Luo,1 Jun Li,1 Yi Cheng Lu,2 and Wei Lu3
刊名	Applied Physics Letters
	2012-06-26
页码	263502-1—263502-5
通讯作者	曹鸿涛
合作状况	李雨桐
中文摘要	Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits. VC 2012 American Institute of Physics.
学科主题	材料科学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9643]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Cao HT,Ling Yan Liang,1 Hong Tao Cao,1,a) Xiao Bo Chen,1 Zhi Min Liu,1 Fei Zhuge,1 Hao Luo,1 Jun Li,1 Yi Cheng Lu,2 and Wei Lu3. Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities[J]. Applied Physics Letters,2012:263502-1—263502-5.
APA	Cao HT,&Ling Yan Liang,1 Hong Tao Cao,1,a) Xiao Bo Chen,1 Zhi Min Liu,1 Fei Zhuge,1 Hao Luo,1 Jun Li,1 Yi Cheng Lu,2 and Wei Lu3.(2012).Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities.Applied Physics Letters,263502-1—263502-5.
MLA	Cao HT,et al."Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities".Applied Physics Letters (2012):263502-1—263502-5.

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