Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors
	Wan Q(万青) ; Huixuan Liuab and Qing Wan*ab
刊名	Nanoscale
	2012-06-13
期号	4 页码:4481—4484
通讯作者	万青
合作状况	李雨桐
中文摘要	Recently, a bioprotonic field-effect transistor with chitosan nanowire channel was demonstrated [Nat. Commun., 2011, 2, 476].Here, it is interesting to find that solution-processed chitosan films with a large electric-double-layer (EDL) specific capacitance can also be used as the gate dielectrics for low-voltage individual SnO2 nanowire transistors. The field-effect electron mobility, current on/off ratio and sub-threshold slope of such a hybrid SnO2 nanowire device is estimated to be 128 cm2 V 1 s 1, 2.3 104 and 90 mV per decade, respectively. Such low-voltage nanowire EDL transistors gated by chitosan-based proton conductors are promising for nanosensors and bioelectronics.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9634]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Huixuan Liuab and Qing Wan*ab. Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors[J]. Nanoscale,2012(4):4481—4484.
APA	Wan Q,&Huixuan Liuab and Qing Wan*ab.(2012).Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors.Nanoscale(4),4481—4484.
MLA	Wan Q,et al."Low-voltage SnO2 nanowire transistors gated by solution-processed chitosan-based proton conductors".Nanoscale .4(2012):4481—4484.