Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes | |
李润伟、詹清峰 ; Zhenghu Zuo1,2, Bin Chen1,2, Qing-feng Zhan1,2,4, Yiwei Liu1,2, Huali Yang1,2, Zhixiang Li3, Gaojie Xu3 and Run-Wei Li1,2,4 | |
刊名 | J. Phys. D: Appl. Phys. |
2012-04-12 | |
页码 | 1—5 |
通讯作者 | 李润伟、詹清峰 |
合作状况 | 李雨桐 |
中文摘要 | Freestanding Pb(Zr,Ti)O3 (PZT) thin membranes were fabricated by pulsed laser deposition on 200 nm-thick Pt foils which were obtained by etching the platinized Si substrates with HF solutions. X-ray diffraction patterns and Raman spectra show that the crystal lattice distortion of the PZT membranes is relaxed after removing the rigid substrates. Compared with the substrate-clamped PZT films, the saturation polarization and the remanent polarization of the freestanding PZT membranes are increased by about 18% and 21%, respectively. In addition, the freestanding PZT thin membranes possess higher dielectric tunability and larger domain size. The novel facile fabrication method is important for developing flexible ferroelectric devices and also for studying the strain effects on the physical properties of flexible functional membranes. |
学科主题 | 磁电子材料与器件 |
原文出处 | SCI收录 |
公开日期 | 2013-12-16 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/9599] |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | 李润伟、詹清峰,Zhenghu Zuo1,2, Bin Chen1,2, Qing-feng Zhan1,2,4, Yiwei Liu1,2, Huali Yang1,2, Zhixiang Li3, Gaojie Xu3 and Run-Wei Li1,2,4. Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes[J]. J. Phys. D: Appl. Phys.,2012:1—5. |
APA | 李润伟、詹清峰,&Zhenghu Zuo1,2, Bin Chen1,2, Qing-feng Zhan1,2,4, Yiwei Liu1,2, Huali Yang1,2, Zhixiang Li3, Gaojie Xu3 and Run-Wei Li1,2,4.(2012).Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes.J. Phys. D: Appl. Phys.,1—5. |
MLA | 李润伟、詹清峰,et al."Preparation and ferroelectric properties of freestanding Pb(Zr,Ti)O3 thin membranes".J. Phys. D: Appl. Phys. (2012):1—5. |
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