Mechanism for resistive switching in an oxide-based electrochemical metallization memory

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	Mechanism for resistive switching in an oxide-based electrochemical metallization memory
	李润伟、诸葛飞 ; Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia
刊名	APPLIED PHYSICS LETTERS
	2012-02-13
卷号	111 页码:072101-1—072101-4
通讯作者	李润伟、诸葛飞
合作状况	李雨桐
中文摘要	A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide- and selenide-based ones in the resistive switching mechanism. VC 2012 American Institute of Physics.
学科主题	磁电子材料与器件
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9555]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	李润伟、诸葛飞,Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia. Mechanism for resistive switching in an oxide-based electrochemical metallization memory[J]. APPLIED PHYSICS LETTERS,2012,111:072101-1—072101-4.
APA	李润伟、诸葛飞,&Shanshan Peng, Fei Zhuge,a) Xinxin Chen, Xiaojian Zhu, Benlin Hu, Liang Pan, Bin Chen, and Run-Wei Lia.(2012).Mechanism for resistive switching in an oxide-based electrochemical metallization memory.APPLIED PHYSICS LETTERS,111,072101-1—072101-4.
MLA	李润伟、诸葛飞,et al."Mechanism for resistive switching in an oxide-based electrochemical metallization memory".APPLIED PHYSICS LETTERS 111(2012):072101-1—072101-4.