Deformation behavior of single crystal silicon induced by laser shock peening

CORC > 力学研究所 > 中国科学院力学研究所 > 流固耦合系统力学重点实验室(2012-)

	Deformation behavior of single crystal silicon induced by laser shock peening
	Liu YX(柳沅汛); Wu XQ(吴先前); Wang X(王曦); Wei YP(魏延鹏); Huang CG(黄晨光)
	2013
会议名称	2nd International Symposium on Laser Interaction with Matter (LIMIS)
会议日期	SEP 09-12, 2012
通讯作者邮箱	huangcg@imech.ac.cn
会议地点	Xian, PEOPLES R CHINA
关键词	Laser shock peening single crystal silicon plastic deformation surface morphology residual stress
卷号	8796
页码	87962M
通讯作者	Liu, YX (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Mech Fluid Solid Coupling Syst, Beijing 100190, Peoples R China.
中文摘要	Laser shock peening can significantly improve the fatigue life of metals by introducing plastic deformation and compressive residual stresses near the surface. It has been widely applied on metals for surface strengthening. The plastic deformation behavior of brittle materials such as single crystal silicon under LSP is rarely studied. In the present research, the surface integrity and residual compressive stress of P-type single crystal silicon in < 100 > orientation shocked by LSP at imposed high temperature were measured to investigate the plastic deformation mechanism at high temperature and high compressive stress. The surface morphology of shocked silicon, observed using optical microscopy, showed that the cracks on the shocked silicon surface became less and the fragments were smaller while the temperature or the laser power density increased, which indicates that the plasticity of single crystal silicon is improved at high stress and temperature. However, the excessive laser power density would lead to local damage of the shocked silicon. The residual stress, measured using Raman scattering method, showed that the compressive residual stresses with magnitude of a few hundreds of MPa were introduced in the surface layer of silicon after LSP at imposed high temperature, and it increased with respect to the temperature and the laser power density. The experimental result indicates the material has experienced the plastic deformation and provides a potential processing method to improve the mechanical behavior of brittle material like single crystal silicon.
收录类别	CPCI-S ; EI
产权排序	[Liu, Yuanxun; Wu, Xianqian; Wang, Xi; Wei, Yanpeng; Huang, Chenguang] Chinese Acad Sci, Inst Mech, Key Lab Mech Fluid Solid Coupling Syst, Beijing 100190, Peoples R China
会议网址	http://dx.doi.org/10.1117/12.2011314
会议录	2ND INTERNATIONAL SYMPOSIUM ON LASER INTERACTION WITH MATTER (LIMIS 2012)
会议录出版者	SPIE-INT SOC OPTICAL ENGINEERING
学科主题	Optics ; Physics ; Applied
语种	英语
ISSN号	0277-786X
ISBN号	978-0-8194-9639-3
WOS记录号	WOS:000323339600094
内容类型	会议论文
源URL	[http://dspace.imech.ac.cn/handle/311007/47576]
专题	力学研究所_流固耦合系统力学重点实验室(2012-)
推荐引用方式 GB/T 7714	Liu YX,Wu XQ,Wang X,et al. Deformation behavior of single crystal silicon induced by laser shock peening[C]. 见:2nd International Symposium on Laser Interaction with Matter (LIMIS). Xian, PEOPLES R CHINA. SEP 09-12, 2012.http://dx.doi.org/10.1117/12.2011314.