Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

doi:10.1021/acsami.2c00063

	Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks
	Zhen, Weili 1,2; Zhou, Xi 3,4; Weng, Shirui 1; Zhu, Wenka 1; Zhang, Changjin 1,5,6
刊名	ACS APPLIED MATERIALS & INTERFACES
	2022-03-16
卷号	14
关键词	2D materials ternary semiconductors photodetectors phototransistors ultrasensitive and ultrafast response optical neural networks
ISSN号	1944-8244
DOI	10.1021/acsami.2c00063
通讯作者	Zhu, Wenka(wkzhu@hmfl.ac.cn) ; Zhang, Changjin(zhangcj@hmfl.ac.cn)
英文摘要	The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 x 10(14) Jones), comparably short response time (tau(rise) = 222 mu s, tau(decay) = 158 mu s), and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by 2 orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response, and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.
资助项目	National Key R&D Program of China[2021YFA1600201] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Anhui Province Laboratory of High Magnetic Field[AHHM-FX-2020-01]
WOS关键词	PHOTOCURRENT GENERATION ; MONOLAYER ; PERFORMANCE ; VAN ; GRAPHENE
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000787549000055
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China ; Anhui Province Laboratory of High Magnetic Field
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/131549]
专题	中国科学院合肥物质科学研究院
通讯作者	Zhu, Wenka; Zhang, Changjin
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, Interdisciplinary Res Ctr, Shanghai Adv Res Inst, Shanghai 201210, Peoples R China 4.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China 5.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China 6.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Zhen, Weili,Zhou, Xi,Weng, Shirui,et al. Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks[J]. ACS APPLIED MATERIALS & INTERFACES,2022,14.
APA	Zhen, Weili,Zhou, Xi,Weng, Shirui,Zhu, Wenka,&Zhang, Changjin.(2022).Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks.ACS APPLIED MATERIALS & INTERFACES,14.
MLA	Zhen, Weili,et al."Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks".ACS APPLIED MATERIALS & INTERFACES 14(2022).