Tunable artificial topological Hall effects in van der Waals heterointerfaces

doi:10.1103/PhysRevB.105.155407

	Tunable artificial topological Hall effects in van der Waals heterointerfaces
	Algarni, Meri 6,7; Tan, Cheng 6; Zheng, Guolin 6; Albarakati, Sultan 6; Zhu, Xiangde 1; Partridge, James 6; Zhu, Yanglin 5; Farrar, Lawrence 6; Tian, Mingliang 1,2,8; Zhou, Jianhui 1
刊名	PHYSICAL REVIEW B
	2022-04-11
卷号	105
ISSN号	2469-9950
DOI	10.1103/PhysRevB.105.155407
通讯作者	Zheng, Guolin(guolin.zheng@rmit.edu.au)
英文摘要	The topological Hall effect (THE) originating from a real-space Berry phase is a significant transport signal for chiral spin textures and has been extensively investigated recently due to its potential applications in topological spintronics. Recently, chiral spin textures and THE were realized in heterointerfaces where spatial inversion symmetry is naturally broken. However, multichannel transport in heterointerfaces can mask the intrinsic THE associated with chiral spin textures. Here, we systematically investigate multichannel transport in two different kinds of van der Waals (vdW) heterointerfaces. In ferromagnetic-ferromagnetic (FM-FM) heterointerfaces with two opposite anomalous Hall effects, multichannel transport has mimicked both positive and negative THE without involving any topological charges, which is dubbed as an artificial THE. Moreover, artificial THEs were also observed in FM-metal heterointerfaces consisting of a single FM layer stacked onto a nodal-line semimetal; this was attributed to the presence of multichannel transport as well. Our findings provide an alternative explanation for THE-like features in heterointerfaces. They also reveal exotic multichannel transport properties in vdW heterointerfaces which could facilitate the development of multifunctional nanodevices based on vdW heterointerfaces.
资助项目	Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies[CE170100039] ; U.S. Department of Energy[DE-SC0019068]
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000804076900001
资助机构	Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies ; U.S. Department of Energy
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/130997]
专题	中国科学院合肥物质科学研究院
通讯作者	Zheng, Guolin
作者单位	1.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Field Magnet Lab, Hefei 230031, Anhui, Peoples R China 2.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 3.Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2500, Australia 4.Univ Wollongong, ARC Ctr Future Low Energy Elect Technol FLEET, Wollongong, NSW 2500, Australia 5.Penn State Univ, Dept Phys, 104 Davey Lab, University Pk, PA 16802 USA 6.RMIT Univ, ARC Ctr Excellence Future Low Energy Elect Techno, Sch Sci, Melbourne, Vic 3001, Australia 7.Albaha Univ, Sch Sci, Dept Phys, Albaha 4781, Alaqiq, Saudi Arabia 8.Anhui Univ, Sch Phys & Mat Sci, Dept Phys, Hefei 230601, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Algarni, Meri,Tan, Cheng,Zheng, Guolin,et al. Tunable artificial topological Hall effects in van der Waals heterointerfaces[J]. PHYSICAL REVIEW B,2022,105.
APA	Algarni, Meri.,Tan, Cheng.,Zheng, Guolin.,Albarakati, Sultan.,Zhu, Xiangde.,...&Wang, Lan.(2022).Tunable artificial topological Hall effects in van der Waals heterointerfaces.PHYSICAL REVIEW B,105.
MLA	Algarni, Meri,et al."Tunable artificial topological Hall effects in van der Waals heterointerfaces".PHYSICAL REVIEW B 105(2022).