Strongly Tunable Raman Resonance in InSe under Pressure br

doi:10.1021/acs.jpcc.2c00913

	Strongly Tunable Raman Resonance in InSe under Pressure br
	Huang, Ge 1,3,4; Zhou, Yan 1; Dong, Zuo-Yuan 1; Li, Wei-Jian 1; Bu, Ke-Jun 1; Zhou, Shi 4,5; Wang, Tao 2,5; Lu, Xu-Jie 1; Chen, Xiao-Jia 1
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2022-04-14
卷号	126
ISSN号	1932-7447
DOI	10.1021/acs.jpcc.2c00913
通讯作者	Chen, Xiao-Jia(xjchen@hpstar.ac.cn)
英文摘要	The graphene-like layered semiconductor indium selenide has recentlyattracted widespread attention owing to its large tunability of the electronic states by varyinglayer thickness, chemical doping, or strain. However, the influence of the modulated inter- andintralayer chemical bonding upon lattice change on the optical and electrical properties is stillin its infant stage. Here, we systematically investigate the high-pressure behaviors of thephonon modes and excitonic states in epsilon-InSe based on the measurements of Raman,absorption, and photoluminescence spectroscopy combined with theoretical calculations. Wefind drastically enhanced intensities similar to 3 orders of magnitude for the polar and high-orderRaman modes. Such intensity enhancements of the Raman modes are found to arise from thenear resonance between the laser photon energy and the exciton B in InSe with increasingpressure. Further analysis indicates unexpected weakening of the intralayer In-In bonds and adecrease of polarity of the In-Se bonds upon compression, thus leading to an increase in theenergy of exciton B. These results also explain the nonlinear pressure-dependent band gaptransition. We demonstrate that InSe provides a versatile platform from which to explore the practical applications inflexibleelectronic and optoelectronic devices.
资助项目	National Key R&D Program of China[2018YFA0305900] ; Shenzhen Virtual University Park[2021Szvup110]
WOS关键词	INDIUM SELENIDE ; ELECTRONIC-STRUCTURE ; VIBRATIONAL PROPERTIES ; BLACK PHOSPHORUS ; LAYERED INSE ; SCATTERING ; GASE
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000791598700027
资助机构	National Key R&D Program of China ; Shenzhen Virtual University Park
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/130855]
专题	中国科学院合肥物质科学研究院
通讯作者	Chen, Xiao-Jia
作者单位	1.Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China 2.Northwestern Polytech Univ, Res & Dev Inst, Shenzhen 518057, Peoples R China 3.Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, HFIPS, Hefei 230031, Peoples R China 4.Univ Sci & Technol China, Hefei 230026, Peoples R China 5.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
推荐引用方式 GB/T 7714	Huang, Ge,Zhou, Yan,Dong, Zuo-Yuan,et al. Strongly Tunable Raman Resonance in InSe under Pressure br[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2022,126.
APA	Huang, Ge.,Zhou, Yan.,Dong, Zuo-Yuan.,Li, Wei-Jian.,Bu, Ke-Jun.,...&Chen, Xiao-Jia.(2022).Strongly Tunable Raman Resonance in InSe under Pressure br.JOURNAL OF PHYSICAL CHEMISTRY C,126.
MLA	Huang, Ge,et al."Strongly Tunable Raman Resonance in InSe under Pressure br".JOURNAL OF PHYSICAL CHEMISTRY C 126(2022).