Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe

doi:10.1002/advs.202203782

	Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe
	Ge, Bangzhi 2,7,8; Lee, Hyungseok 2,3,8; Huang, Lulu 2,4,8; Zhou, Chongjian 2,8; Wei, Zhilei 7; Cai, Bowen 5; Cho, Sung-Pyo 6; Li, Jing-Feng 5; Qiao, Guanjun 1,7; Qin, Xiaoying 4
刊名	ADVANCED SCIENCE
	2022-10-26
关键词	average thermoelectric figure of merit nanoscale defect PbSe power factor thermoelectric
DOI	10.1002/advs.202203782
通讯作者	Shi, Zhongqi(zhongqishi@mail.xjtu.edu.cn) ; Chung, In(inchung@snu.ac.kr)
英文摘要	Realizing high average thermoelectric figure of merit (ZT(ave)) and power factor (PFave) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT(ave) and PFave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb1+xSe0.8Te0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (mu(H)) and concentration (n(H)) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (sigma). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n(H) and mu(H); and sigma and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PFave approximate to 20 mu W cm(-1) K-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT(ave) of approximate to 1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.
资助项目	National Research Foundation of Korea (NRF) - Korean government (MSIT)[NRF-2020R1A2C2011111] ; Nano Material Technology Development Program through the NRF - Korean Government (MSIP)[NRF-2017M3A7B4049274] ; Institute for Basic Science[IBS-R009-G2] ; National Natural Science Foundation of China[92163112] ; National Natural Science Foundation of China[51872222] ; Shaanxi Innovation Capacity Support Program[2018TD-031] ; Xi'an Municipal Science and Technology Project[2020KJRC0056] ; 111 project 2.0[BP2018008] ; High-Performance Computing (HPC) Platform, Xi'an Jiaotong University
WOS关键词	ULTRALOW THERMAL-CONDUCTIVITY ; SEEBECK COEFFICIENT ; PERFORMANCE ; POWER ; ENHANCEMENT ; QUALITY ; LEAD
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	WILEY
WOS记录号	WOS:000871934800001
资助机构	National Research Foundation of Korea (NRF) - Korean government (MSIT) ; Nano Material Technology Development Program through the NRF - Korean Government (MSIP) ; Institute for Basic Science ; National Natural Science Foundation of China ; Shaanxi Innovation Capacity Support Program ; Xi'an Municipal Science and Technology Project ; 111 project 2.0 ; High-Performance Computing (HPC) Platform, Xi'an Jiaotong University
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/129821]
专题	中国科学院合肥物质科学研究院
通讯作者	Shi, Zhongqi; Chung, In
作者单位	1.Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Jiangsu, Peoples R China 2.Seoul Natl Univ, Inst Chem Proc, Seoul 08826, South Korea 3.Inst Basic Sci IBS, Ctr Correlated Electron Syst, Seoul 08826, South Korea 4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Photovolta & Energy Conservat Mat, HFIPS, Hefei 230031, Peoples R China 5.Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Seoul 08826, South Korea 6.Seoul Natl Univ, Natl Ctr Interuniv Res Facil, Republic Of Korea 08826, South Korea 7.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China 8.Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
推荐引用方式 GB/T 7714	Ge, Bangzhi,Lee, Hyungseok,Huang, Lulu,et al. Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe[J]. ADVANCED SCIENCE,2022.
APA	Ge, Bangzhi.,Lee, Hyungseok.,Huang, Lulu.,Zhou, Chongjian.,Wei, Zhilei.,...&Chung, In.(2022).Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe.ADVANCED SCIENCE.
MLA	Ge, Bangzhi,et al."Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe".ADVANCED SCIENCE (2022).