The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films

doi:10.1088/2058-6272/ac5c27

	The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films
	YANG,Yan 3,4,6; JI,Peiyu 1; LI,Maoyang 5; YU,Yaowei 2; HUANG,Jianjun 4,6; YU,Bin 3,6; WU,Xuemei 5; HUANG,Tianyuan 5
刊名	Plasma Science and Technology
	2022-05-19
卷号	24
关键词	helicon wave plasma reactive sputtering tungsten nitride plasma diagnosis
ISSN号	1009-0630
DOI	10.1088/2058-6272/ac5c27
通讯作者	HUANG,Tianyuan()
英文摘要	Abstract A reactive helicon wave plasma (HWP) sputtering method is used for the deposition of tungsten nitride (WN x ) thin films. N2 is introduced downstream in the diffusion chamber. The impacts of N2 on the Ar-HWP parameters, such as ion energy distribution functions (IEDFs), electron energy probability functions (EEPFs), electron temperature (T e) and density (n e), are investigated. With the addition of N2, a decrease in electron density is observed due to the dissociative recombination of electrons with N 2 + . The similar IEDF curves of Ar+ and N2 + indicate that the majority of N 2 + stems from the charge transfer in the collision between Ar+ and N2. Moreover, due to the collisions between electrons and N2 ions, EEPFs show a relatively lower T e with a depletion in the high-energy tail. With increasing negative bias from 50 to 200 V, a phase transition from hexagonal WN to fcc-WN0.5 is observed, together with an increase in the deposition rate and roughness.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:PST_24_6_065503
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/129651]
专题	中国科学院合肥物质科学研究院
通讯作者	HUANG,Tianyuan
作者单位	1.School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215123, People’s Republic of China 2.Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, People’s Republic of China 3.Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China 4.Advanced Energy Research Center, Shenzhen University, Shenzhen 518060, People’s Republic of China 5.School of Physical Science and Technology, Soochow University, Suzhou 215123, People’s Republic of China 6.College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People’s Republic of China
推荐引用方式 GB/T 7714	YANG,Yan,JI,Peiyu,LI,Maoyang,et al. The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films[J]. Plasma Science and Technology,2022,24.
APA	YANG,Yan.,JI,Peiyu.,LI,Maoyang.,YU,Yaowei.,HUANG,Jianjun.,...&HUANG,Tianyuan.(2022).The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films.Plasma Science and Technology,24.
MLA	YANG,Yan,et al."The application of a helicon plasma source in reactive sputter deposition of tungsten nitride thin films".Plasma Science and Technology 24(2022).