Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber (vol 13, pg 11911, 2021)

doi:10.1021/acsami.2c07370

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	Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber (vol 13, pg 11911, 2021)
	Li, Tiantian 4; Xia, Long 1; Yang, Hua 3; Wang, Xinyu 1; Zhang, Tao 1; Huang, Xiaoxiao 4; Xiong, Li 1; Qin, Chunlin 1; Wen, Guangwu 2
刊名	ACS APPLIED MATERIALS & INTERFACES
	2022-05-01
卷号	14 期号:20 页码:24070-24070
ISSN号	1944-8244
DOI	10.1021/acsami.2c07370
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000820113400001
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/158948]
专题	理学院
作者单位	1.Harbin Inst Technol Weihai, Sch Mat Sci & Engn, Weihai 264209, Peoples R China; 2.Shandong Univ Technol, Sch Mat Sci & Engn, Zibo 255000, Peoples R China 3.Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China; 4.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China;
推荐引用方式 GB/T 7714	Li, Tiantian,Xia, Long,Yang, Hua,et al. Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber (vol 13, pg 11911, 2021)[J]. ACS APPLIED MATERIALS & INTERFACES,2022,14(20):24070-24070.
APA	Li, Tiantian.,Xia, Long.,Yang, Hua.,Wang, Xinyu.,Zhang, Tao.,...&Wen, Guangwu.(2022).Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber (vol 13, pg 11911, 2021).ACS APPLIED MATERIALS & INTERFACES,14(20),24070-24070.
MLA	Li, Tiantian,et al."Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber (vol 13, pg 11911, 2021)".ACS APPLIED MATERIALS & INTERFACES 14.20(2022):24070-24070.