Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber

doi:10.1021/acsami.0c22049

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	Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber
	Li, Tiantian 3; Xia, Long 3; Yang, Hua 2; Wang, Xinyu 3; Zhang, Tao 3; Huang, Xiaoxiao 1; Xiong, Li 3; Qin, Chunlin 3; Wen, Guangwu 4
刊名	ACS APPLIED MATERIALS & INTERFACES
	2021
卷号	13 期号:10 页码:11911-11919
关键词	Cu@Sn/rGO composites tunable dielectric properties Schottky junction Cu-Sn heterojunction interface strong reflection loss
ISSN号	1944-8244
DOI	10.1021/acsami.0c22049
英文摘要	Developing high-performance dielectric absorbers, low filler loading, and a broad absorption band remains a great challenge for wireless data communication systems, household appliances, local area network, and so on. Herein, we report a facile green method to design and fabricate a copper-coated tin/reduced graphene oxide (Cu@Sn/rGO) composites with a heterojunction obtained by modifying a Schottky junction. The unique heterojunction can enable an appropriate balance between impedance and strong loss capacity. Meanwhile, it can not only promote the carrier migration but also obtain the rich interfaces. Consequently, a Cu@Sn/rGO composite with a heterojunction exhibits superior absorption intensity, far surpassing that of other absorbing materials reported. With a weight content of only 5 wt %, the maximum absorptivity reaches -49.19 dB at 6.08 GHz, and an effective absorption bandwidth (RL < -10 dB) of 13.94 GHz is achieved when the absorber's thickness ranges from 1.7 to 5.5 mm. This study provides new insights into the design and synthesis of a novel microwave absorption material with lightweight, smaller filler loading, and strong reflection loss.
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000630398500034
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/148316]
专题	理学院
作者单位	1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China 2.Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China; 3.Harbin Inst Technol Weihai, Sch Mat Sci & Engn, Weihai 264209, Peoples R China; 4.Shandong Univ Technol, Sch Mat Sci & Engn, Zibo 255000, Peoples R China;
推荐引用方式 GB/T 7714	Li, Tiantian,Xia, Long,Yang, Hua,et al. Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(10):11911-11919.
APA	Li, Tiantian.,Xia, Long.,Yang, Hua.,Wang, Xinyu.,Zhang, Tao.,...&Wen, Guangwu.(2021).Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber.ACS APPLIED MATERIALS & INTERFACES,13(10),11911-11919.
MLA	Li, Tiantian,et al."Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber".ACS APPLIED MATERIALS & INTERFACES 13.10(2021):11911-11919.