Performance and local structure evolution of NbMoTaWV entropy-stabilized oxide thin films with variable oxygen content

doi:10.1016/j.surfcoat.2020.126326

CORC > 兰州理工大学 > 兰州理工大学 > 省部共建有色金属先进加工与再利用国家重点实验室

	Performance and local structure evolution of NbMoTaWV entropy-stabilized oxide thin films with variable oxygen content
	Bi, Linxia 2; Li, Xiaona 2; Li, Zhumin 2; Hu, Yinglin 2; Zhang, Junyi 2; Wang, Qing 2; Dong, Chuang 2; Zheng, Yuehong 1; Liaw, Peter K.3
刊名	Surface and Coatings Technology
	2020-11-25
卷号	402
关键词	Crystal atomic structure Entropy Film preparation Hardness Magnetic semiconductors Magnetron sputtering Molybdenum alloys Niobium alloys Oxide minerals Oxide semiconductors Oxygen Refractory metals Silicon wafers Single crystals Tantalum alloys Thin films Titanium dioxide Tungsten alloys Vanadium alloys Amorphous oxide semiconductor (AOS) Application prospect Conductive mechanisms Metal oxide thin films Radio frequency magnetron sputtering Room-temperature resistivity Temperature behavior Wide temperature ranges
ISSN号	02578972
DOI	10.1016/j.surfcoat.2020.126326
英文摘要	Entropy-stabilized refractory metal oxide thin films have great application prospects in many fields due to their good preparation performance, excellent thermal stability, high hardness and abrasion resistance, and adjustable conductivity. In present paper, a series of (NbMoTaWV)100-xOx (x = 0–53.63) five-component entropy-stabilized oxide thin films were deposited on the single-crystal Si (100) substrates by radio frequency magnetron sputtering to study the effect of oxygen content on their performance and local structure. With increasing the oxygen content, the films gradually transform from body-centered-cubic solid solutions to the amorphous oxides. The hardness and modulus of the films obtain a maximum of 15.5 GPa and 215.6 GPa, respectively. The room temperature resistivity can be tuned in the range of 55–1.26 × 106 μΩ·cm, and the trends of the resistivity-temperature behavior of the films have significant differences. Films with low oxygen contents show good resistivity stability in a wide temperature range. Simultaneously, the conductive mechanism gradually changes from the metallic type to amorphous oxide semiconductor type (a near TiO2 type ionic crystal type) as the oxygen content increases. The cluster-plus-glue-atom model has been introduced to interpret the composition of films, and the relationship between the variations of the local structure and strengthening (or conduction) mechanism is discussed in detail. Here, the performance of (NbMoTaWV)100-xOx films can be modulated in a large range (covering conductors to semiconductors), which provides a broad prospect for the application of refractory high-entropy oxide films. © 2020 Elsevier B.V.
语种	英语
出版者	Elsevier B.V.
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/115604]
专题	省部共建有色金属先进加工与再利用国家重点实验室能源与动力工程学院
作者单位	1.State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou; 730050, China; 2.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian; 116024, China; 3.Department of Materials Science and Engineering, The University of Tennessee, Knoxville; TN; 37996, United States
推荐引用方式 GB/T 7714	Bi, Linxia,Li, Xiaona,Li, Zhumin,et al. Performance and local structure evolution of NbMoTaWV entropy-stabilized oxide thin films with variable oxygen content[J]. Surface and Coatings Technology,2020,402.
APA	Bi, Linxia.,Li, Xiaona.,Li, Zhumin.,Hu, Yinglin.,Zhang, Junyi.,...&Liaw, Peter K..(2020).Performance and local structure evolution of NbMoTaWV entropy-stabilized oxide thin films with variable oxygen content.Surface and Coatings Technology,402.
MLA	Bi, Linxia,et al."Performance and local structure evolution of NbMoTaWV entropy-stabilized oxide thin films with variable oxygen content".Surface and Coatings Technology 402(2020).