Interfacial dislocations dominated lateral growth of long-period stacking ordered phase in Mg alloys

doi:10.1016/j.jmst.2020.05.045

	Interfacial dislocations dominated lateral growth of long-period stacking ordered phase in Mg alloys
	Jin, Qianqian 2; Shao, Xiaohong 2; Zheng, Shijian 1; Zhou, Yangtao 2; Zhang, Bo 2; Ma, Xiuliang 2,3
刊名	Journal of Materials Science and Technology
	2021-01-15
卷号	61 页码:114-118
关键词	Atoms Drag High resolution transmission electron microscopy Magnesium metallography Scanning electron microscopy Zinc metallography Elastic interactions High resolution scanning transmission electron microscopies Interfacial dislocations Long period stacking ordered phase Macroscopic strains Precipitate strengthening Semi-coherent interfaces Shockley partial dislocations
ISSN号	10050302
DOI	10.1016/j.jmst.2020.05.045
英文摘要	Understanding the interface between strengthening precipitates and matrix in alloys, especially at the atomic level, is a critical issue for tailoring the precipitate strengthening to achieve desired mechanical properties. Using high-resolution scanning transmission electron microscopy, we here clarify the semi-coherent interfaces between the matrix and long-period stacking ordered (LPSO) phases, including 18R and 14H, in Mg–Zn–Y alloys. The LPSO/Mg interface features the unique configuration of the Shockley partial dislocations, which produces a near zero macroscopic strain because the net Burgers vectors equal zero. The 18R/Mg interface characterizes a dissociated structure that can be described as a narrow slab of 54R. There are two dislocation arrays accompanied to the 18R/54R and 54R/Mg interface, resulting a slight deviation (about 2.3°). The 14R/Mg interface exhibits the dislocation pairs associated with solute atoms. We further evaluate the stability and morphology of the corresponding interfaces based on elastic interaction, via calculating the mutual strong interactions between dislocation arrays, as well as that between the dislocations and solute atoms. The synchronized migration of interfacial dislocations and solute atoms, like move-drag behavior, dominates the lateral growth of LPSO phases in Mg alloys. © 2020
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	Chinese Society of Metals
WOS记录号	WOS:000600062800011
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/115507]
专题	材料科学与工程学院材料科学与工程学院_特聘教授组
作者单位	1.School of Materials Science and Engineering, Research Institute for Energy Equipment Materials, Hebei University of Technology, Tianjin; 300130, China 2.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang; 110016, China; 3.School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou; 730050, China;
推荐引用方式 GB/T 7714	Jin, Qianqian,Shao, Xiaohong,Zheng, Shijian,et al. Interfacial dislocations dominated lateral growth of long-period stacking ordered phase in Mg alloys[J]. Journal of Materials Science and Technology,2021,61:114-118.
APA	Jin, Qianqian,Shao, Xiaohong,Zheng, Shijian,Zhou, Yangtao,Zhang, Bo,&Ma, Xiuliang.(2021).Interfacial dislocations dominated lateral growth of long-period stacking ordered phase in Mg alloys.Journal of Materials Science and Technology,61,114-118.
MLA	Jin, Qianqian,et al."Interfacial dislocations dominated lateral growth of long-period stacking ordered phase in Mg alloys".Journal of Materials Science and Technology 61(2021):114-118.