Investigations on preparation and the hall effect of the Cu3N thin films

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	Investigations on preparation and the hall effect of the Cu3N thin films
	Wang, Ming-Xu ; Yue, Guang-Hui ; Fan, Xiao-Yan ; Yan, De ; Yan, Peng-Xun ; Yang, Qiang
刊名	Rengong Jingti Xuebao/Journal of Synthetic Crystals
	2006-10-01
卷号	35 期号:5 页码:1108-1112
ISSN号	1000985X
英文摘要	Cu3N thin film was prepared by reactive radio-frequency(RF) magnetron sputtering on glass substrate with the substrate temperature of 100°C, and the pure N2 flow rate of 12sccm. XRD pattern showed a preferred [100] orientation of the film. SEM and AFM images showed that the film surface is smooth and tightly structured. The Hall effect properties of the film were characterized by four-probe method, and the result showed that both the Hall coefficient and the Hall resistivity increase with temperature decreasing. The Hall mobility decreases in a short range at high temperature region, but somewhat increases in low temperature region. We also figured out the value of the band gap at about 1. 35eV from the Hall coefficients at various temperatures.
语种	中文
出版者	Chinese Ceramic Society, Beijing, China
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/151389]
专题	兰州理工大学
作者单位	1.Lanzhou Polytechnical College, Lanzhou 730050, China 2.Institute for Plasma and Metal Materials, Lanzhou University, Lanzhou 730000, China;
推荐引用方式 GB/T 7714	Wang, Ming-Xu,Yue, Guang-Hui,Fan, Xiao-Yan,et al. Investigations on preparation and the hall effect of the Cu3N thin films[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2006,35(5):1108-1112.
APA	Wang, Ming-Xu,Yue, Guang-Hui,Fan, Xiao-Yan,Yan, De,Yan, Peng-Xun,&Yang, Qiang.(2006).Investigations on preparation and the hall effect of the Cu3N thin films.Rengong Jingti Xuebao/Journal of Synthetic Crystals,35(5),1108-1112.
MLA	Wang, Ming-Xu,et al."Investigations on preparation and the hall effect of the Cu3N thin films".Rengong Jingti Xuebao/Journal of Synthetic Crystals 35.5(2006):1108-1112.