Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films

doi:10.1016/j.actamat.2017.03.064

CORC > 兰州理工大学 > 兰州理工大学

	Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films
	Li, S.1,2; Zhu, Y. L.1; Tang, Y. L.1; Liu, Y.1; Zhang, S. R.1,2; Wang, Y. J.1; Ma, X. L.1,3
刊名	Acta Materialia
	2017-06-01
卷号	131 页码:123-130
关键词	Domain walls Ferroelectric materials Ferroelectricity Film thickness Gadolinium compounds High resolution transmission electron microscopy Lead titanate Microwave devices Programmable logic controllers Pulsed laser deposition Scanning electron microscopy Strain Thin films Titanium compounds Transmission electron microscopy Conventional transmission electron microscopies Domain configurations Domain structure Ferroelastic domains Ferroelectric domains Future applications PbTiO3 Tunable microwave devices
ISSN号	13596454
DOI	10.1016/j.actamat.2017.03.064
英文摘要	Ferroelectric a1/a2 domain structure has great potentials in high dielectric capacitors and tunable microwave devices. Understanding its structure is crucial to better control the domain configurations for future applications. In this paper, PbTiO3 thin films with variant thicknesses are deposited on (110)-oriented GdScO3 substrates by Pulsed Laser Deposition (PLD) and investigated by using conventional transmission electron microscopy (TEM) and Cs-corrected Scanning TEM. Contrast analysis and electron diffractions reveal that PbTiO3 films are domain oriented consisting of a1/a2 and a/c domain structure. The a1/a2 domains are found to distribute periodically and its width increases with increasing film thickness following square root rule. Cs-corrected STEM imaging demonstrates that the domain walls of a1/a2 domain structure have the rotation characteristic of 90° ferroelastic domain wall. The interchange of a1/a2 domains induces the formation of vertex domains composed of two 90° and one 180° domain walls. Strains are mainly concentrated on the domain walls. The formation of this complex domain configuration is discussed in terms of the effect of the misfit strain, film thickness and cooling rate. These results provide novel information about a1/a2 domain structures and are expected to shed some light on modulating a1/a2 ferroelectric domain patterns in the design of ferroelectric-based devices. © 2017 Acta Materialia Inc.
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010]
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	Elsevier Ltd
WOS记录号	WOS:000402343400013
状态	已发表
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/114788]
专题	兰州理工大学材料科学与工程学院
通讯作者	Zhu, Y. L.
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Peoples R China 2.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100039, Peoples R China 3.Lanzhou Univ Technol, Sch Mat Sci & Engn, Langongping Rd 287, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Li, S.,Zhu, Y. L.,Tang, Y. L.,et al. Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films[J]. Acta Materialia,2017,131:123-130.
APA	Li, S..,Zhu, Y. L..,Tang, Y. L..,Liu, Y..,Zhang, S. R..,...&Ma, X. L..(2017).Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films.Acta Materialia,131,123-130.
MLA	Li, S.,et al."Thickness-dependent a1/a2 domain evolution in ferroelectric PbTiO3 films".Acta Materialia 131(2017):123-130.