Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 材料物理与化学研究室

	Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor
	Wu D. Q.; Jia R.; Yao J. C.; Zhao H. S.; Chang A. M.
刊名	THIN SOLID FILMS
	2011
卷号	519 期号:10 页码:3358-3362
关键词	High-kappa gate dielectrics Leakage current density Er(2)O(3) Ni-Al-O Diffusion barrier layer
ISSN号	0040-6090
英文摘要	Using amorphous Ni-AI-O (a-Ni-AI-O) thin film as the intermediate layer, poly-crystalline Er203 thin film was grown on a-Ni-AI-O/Si (p-type) via laser molecular beam epitaxy, forming the Er(2)O(3)/Ni-AI-O gate stack. It was found that the mean dielectric constant of the Er(2)O(3)/Ni-AI-O gate stack with an equivalent oxide thickness of 1.5 nm is about 17-23, the interfacial states density is about 3.16 x 10(12) cm(-2) and the stack gate leakage current density is as small as 4.1 x 10(-6) A/cm(2). Furthermore, The insertion of the Ni-AI-O thin film between the Er(2)O(3) gate dielectric and p-Si substrate prevents the oxygen from being out-diffused, which significantly improved the stability of gate stack, showing that the Er(2)O(3)/Ni-Al-O gate stack thin film could be used as an ideal gate oxide layer for the future Metal Oxide Semiconductor Field Effect Transistors.
学科主题	Materials Science ; Physics
收录类别	SCI
WOS记录号	WOS:000289174300061
公开日期	2013-11-07
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2792]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China;CAS, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;NingXia Univ, Sch Phys & Elect Informat Sci, Yinchuan 750021, Peoples R China
推荐引用方式 GB/T 7714	Wu D. Q.,Jia R.,Yao J. C.,et al. Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor[J]. THIN SOLID FILMS,2011,519(10):3358-3362.
APA	Wu D. Q.,Jia R.,Yao J. C.,Zhao H. S.,&Chang A. M..(2011).Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor.THIN SOLID FILMS,519(10),3358-3362.
MLA	Wu D. Q.,et al."Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor".THIN SOLID FILMS 519.10(2011):3358-3362.