serial ferroelectric memory ionizing radiation effects and annealing characteristics

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 新疆维吾尔自治区电子信息材料与器件重点实验室

	serial ferroelectric memory ionizing radiation effects and annealing characteristics
	Zhang Xing-Yao; Guo Qi; Lu Wu; Zhang Xiao-Fu; Zheng Qi-Wen; Cui Jiang-Wei; Li Yu-Dong; Zhou Dong
刊名	ACTA PHYSICA SINICA
	2013
卷号	62 期号:15 页码:-
关键词	ferroelectric random memory ionizing radiation effects annealing characteristics
ISSN号	1000-3290
通讯作者	Guo, Q
中文摘要	Ferroelectric random memory was irradiated and annealed by Co-60 gamma-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.
学科主题	Physics
收录类别	SCI
公开日期	2013-11-07
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/2697]
专题	新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室新疆理化技术研究所_材料物理与化学研究室
作者单位	Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China;Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang Xing-Yao,Guo Qi,Lu Wu,et al. serial ferroelectric memory ionizing radiation effects and annealing characteristics[J]. ACTA PHYSICA SINICA,2013,62(15):-.
APA	Zhang Xing-Yao.,Guo Qi.,Lu Wu.,Zhang Xiao-Fu.,Zheng Qi-Wen.,...&Zhou Dong.(2013).serial ferroelectric memory ionizing radiation effects and annealing characteristics.ACTA PHYSICA SINICA,62(15),-.
MLA	Zhang Xing-Yao,et al."serial ferroelectric memory ionizing radiation effects and annealing characteristics".ACTA PHYSICA SINICA 62.15(2013):-.