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	Mid-Infrared Graphene/Silicon-Based Electro-Optic Phase Modulator
	Ban, Xiaoqiang2,3,4; Dong, Bo4; Chen, Zongyu4; Huang, Wobin4; Zhong, Ming1; Little, Brent E.2,3
英文摘要	Electro-optic modulator plays an important role in optical signal processing. We demonstrated a low loss graphene/silicon-waveguide-based electro-optic phase modulator. The results demonstrate that the modulation efficiency increases when increasing the graphene layer and modulating length in mid-infrared region. Its 3 dB bandwidth (41.2 GHz) does not depend on the graphene modulating length. The two-layer graphene/silicon waveguide modulator can reach π phase shift with minimum insertion loss (0.05 dB) when the modulation length is 400 μm. This work is useful for designing a high-performance phase modulator. © 2022, The Authors. All rights reserved.
	2022-07-25
产权排序	1
语种	英语
内容类型	预印本
源URL	[http://ir.opt.ac.cn/handle/181661/96081]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.School of Mathematics and Statistics, Shaanxi Normal University, Xi’an; 710119, China 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'An; 710119, China; 4.College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen; 518118, China;
推荐引用方式 GB/T 7714	Ban, Xiaoqiang,Dong, Bo,Chen, Zongyu,et al. Mid-Infrared Graphene/Silicon-Based Electro-Optic Phase Modulator. 2022.

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