Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks

doi:10.1039/d2ra02088b

CORC > 金属研究所 > 中国科学院金属研究所

	Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks
	Sun, Yun 3,4; Li, Pengpeng 3,4; Kauppinen, Esko, I 2; Sun, Dong-Ming 3,4; Ohno, Yutaka 1
刊名	RSC ADVANCES
	2022-05-23
卷号	12 期号:25 页码:16291-16295
DOI	10.1039/d2ra02088b
通讯作者	Sun, Dong-Ming(dmsun@imr.ac.cn) ; Ohno, Yutaka(yohno@nuee.nagoya-u.ac.jp)
英文摘要	Approximately 30% of as-grown carbon nanotube (CNT) networks are metallic, usually leading to a trade-off between carrier mobility and on/off ratio in CNT thin-film transistors (TFTs). Figuring out the key factors of ultra-high on/off ratio in CNT TFTs should be considerably essential for the development of large-scale electronic devices in the future. Here ultra-high on/off ratios of 10(7)-10(8) are realized for CNT TFTs with mobility of similar to 500 cm(2) V-1 s(-1). We propose that one of the key factors to achieve the high on/off ratio is a clean CNT thin film without charge traps and doping due to residual dispersant used in conventional solution processes. Moreover, on/off ratio degradation under operation voltage is significantly suppressed by decreasing the diameter of CNTs.
资助项目	National Natural Science Foundation of China[62125406] ; National Key Research and Development Program of China[2021YFA1200013] ; Key-Area Research and Development Program of Guangdong Province[2019B010934001] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[ZDBS-LY-JSC027] ; R&D promotion scheme funding international joint research by National Institute of Information and Communications Technology (NICT), Japan ; Aalto University MIDE program via the CNB-E project ; Academy of Finland[128445]
WOS研究方向	Chemistry
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000804229100001
资助机构	National Natural Science Foundation of China ; National Key Research and Development Program of China ; Key-Area Research and Development Program of Guangdong Province ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; R&D promotion scheme funding international joint research by National Institute of Information and Communications Technology (NICT), Japan ; Aalto University MIDE program via the CNB-E project ; Academy of Finland
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/174119]
专题	金属研究所_中国科学院金属研究所
通讯作者	Sun, Dong-Ming; Ohno, Yutaka
作者单位	1.Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan 2.Aalto Univ, Dept Appl Phys, Sch Sci, POB 15100, FI-00076 Aalto Espoo, Finland 3.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Sun, Yun,Li, Pengpeng,Kauppinen, Esko, I,et al. Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks[J]. RSC ADVANCES,2022,12(25):16291-16295.
APA	Sun, Yun,Li, Pengpeng,Kauppinen, Esko, I,Sun, Dong-Ming,&Ohno, Yutaka.(2022).Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks.RSC ADVANCES,12(25),16291-16295.
MLA	Sun, Yun,et al."Key factors for ultra-high on/off ratio thin-film transistors using as-grown carbon nanotube networks".RSC ADVANCES 12.25(2022):16291-16295.