Slip-Line-Guided Growth of Graphene

doi:10.1002/adma.202201188

CORC > 力学研究所 > 中国科学院力学研究所 > 非线性力学国家重点实验室

	Slip-Line-Guided Growth of Graphene
	Li, Yanglizhi 4,5,6; Liu, Haiyang 4,6; Chang, Zhenghua 2,3; Li, Haoxiang 4; Wang, Shenxing 4,6; Lin, Li 1,4; Peng, Hailin 4,6; Wei, Yujie 2,3; Sun, Luzhao 4; Liu, Zhongfan 4,6
刊名	ADVANCED MATERIALS
	2022-06-03
页码	8
关键词	epitaxial growth grain-boundary engineering graphene slip line
ISSN号	0935-9648
DOI	10.1002/adma.202201188
通讯作者	Wei, Yujie(yujie_wei@lnm.imech.ac.cn) ; Sun, Luzhao(sunlz-cnc@pku.edu.cn) ; Liu, Zhongfan(zfliu@pku.edu.cn)
英文摘要	Manipulating the crystal orientation of emerging 2D materials via chemical vapor deposition (CVD) is a key premise for obtaining single-crystalline films and designing specific grain-boundary (GB) structures. Herein, the controllable crystal orientation of graphene during the CVD process is demonstrated on a single-crystal metal surface with preexisting atomic-scale stair steps resulting from dislocation slip lines. The slip-line-guided growth principle is established to explain and predict the crystal orientation distribution of graphene on a variety of metal facets, especially for the multidirectional growth cases on Cu(hk0) and Cu(hkl) substrates. Not only large-area single-crystal graphene, but also bicrystal graphene with controllable GB misorientations, are successfully synthesized by rationally employing tailored metal substrate facets. As a demonstration, bicrystal graphenes with misorientations of approximate to 21 degrees and approximate to 11 degrees are constructed on Cu(410) and Cu(430) foils, respectively. This guideline builds a bridge linking the crystal orientation of graphene and the substrate facet, thereby opening a new avenue for constructing bicrystals with the desired GB structures or manipulating 2D superlattice twist angles in a bottom-up manner.
资助项目	National Natural Science Foundation of China (NSFC)[T2188101] ; National Natural Science Foundation of China (NSFC)[52021006] ; Beijing National Laboratory for Molecular Science[BNLMS-CXTD-202001] ; National Key R&D Program of China[2016YFA0200101] ; National Key R&D Program of China[2016YFA0200103] ; National Key R&D Program of China[2018YFA0703502] ; Beijing Municipal Science and Technology Commission[Z191100000819005] ; Beijing Municipal Science and Technology Commission[Z191100000819007] ; Beijing Municipal Science and Technology Commission[Z201100008720005] ; NSFC Basic Science Center for Multiscale Problems in Nonlinear Mechanics[11988102]
WOS关键词	TOTAL-ENERGY CALCULATIONS ; SINGLE-CRYSTAL GRAPHENE ; EPITAXIAL-GROWTH ; CU ; ORIENTATION ; METALS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
WOS记录号	WOS:000805592600001
资助机构	National Natural Science Foundation of China (NSFC) ; Beijing National Laboratory for Molecular Science ; National Key R&D Program of China ; Beijing Municipal Science and Technology Commission ; NSFC Basic Science Center for Multiscale Problems in Nonlinear Mechanics
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/89630]
专题	力学研究所_非线性力学国家重点实验室
通讯作者	Wei, Yujie; Sun, Luzhao; Liu, Zhongfan
作者单位	1.Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China 2.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Mech, LNM, Beijing 100190, Peoples R China 4.Beijing Graphene Inst, Beijing 100095, Peoples R China 5.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 6.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem,Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China
推荐引用方式 GB/T 7714	Li, Yanglizhi,Liu, Haiyang,Chang, Zhenghua,et al. Slip-Line-Guided Growth of Graphene[J]. ADVANCED MATERIALS,2022:8.
APA	Li, Yanglizhi.,Liu, Haiyang.,Chang, Zhenghua.,Li, Haoxiang.,Wang, Shenxing.,...&Liu, Zhongfan.(2022).Slip-Line-Guided Growth of Graphene.ADVANCED MATERIALS,8.
MLA	Li, Yanglizhi,et al."Slip-Line-Guided Growth of Graphene".ADVANCED MATERIALS (2022):8.