The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

doi:10.1002/aelm.202100759

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation
	Y. Chen; Z. M. Shi; S. L. Zhang; J. W. Ben; K. Jiang; H. Zang; Y. P. Jia; W. Lu; D. B. Li and X. J. Sun
刊名	Advanced Electronic Materials
	2022
卷号	8 期号:1 页码:11
ISSN号	2199-160X
DOI	10.1002/aelm.202100759
英文摘要	High-quality and polarity-controlled III-nitride is crucial for realizing high-performance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N-polar III-nitrides till now. In this work, the van der Waals epitaxy of high-quality N-polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS2 insert layer, the N-polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity-controlled aluminium nitride nucleation layer and GaN epilayer on the MoS2 lighten the great potentiality for the application of similar 2D materials. The ultraviolet photodetector based on N-polar GaN possesses over seven times' response higher than that of the Ga-polar one, which is both beneficial from the high crystalline quality and efficient polarization electric field control of the N-polar GaN. Present work provides a new strategy for the polarity control of high-quality III-nitrides by the van der Waals epitaxy with a novel 2D insert layer, which would be also extended in other optoelectronic and electronic devices.
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内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/65740]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Chen,Z. M. Shi,S. L. Zhang,et al. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation[J]. Advanced Electronic Materials,2022,8(1):11.
APA	Y. Chen.,Z. M. Shi.,S. L. Zhang.,J. W. Ben.,K. Jiang.,...&D. B. Li and X. J. Sun.(2022).The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.Advanced Electronic Materials,8(1),11.
MLA	Y. Chen,et al."The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation".Advanced Electronic Materials 8.1(2022):11.