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	Fast and High Quality Composite Processing Method for Silicon Carbide Wafers
	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai
刊名	Guangxue Xuebao/Acta Optica Sinica
	2020
卷号	40期号:13
ISSN号	2532239
DOI	10.3788/AOS202040.1322001
英文摘要	In order to improve the polishing efficiency and surface quality of single-crystal silicon carbide (SiC) materials, we propose a new method based on traditional polishing combined with magnetorheological finishing (MRF), which is used for the practical fabrication of a single-crystal SiC wafer with a diameter of 100 mm. First, the surface roughness of the single-crystal SiC wafer is rapidly processed to about 0.6 nm by the ring polishing method. Then, the wafer uniform polishing for 35 min with MRF is adopted to improve the defects on the surface of SiC wafer and eliminate the subsurface damage of the wafer via the preparation of a special magnetorheological polishing fluid. Finally, the ring polishing is adopted to finely polish the SiC wafer with the nano-diamond polishing fluid and a high surface quality single-crystal SiC wafer with roughness of 0.327 nm is obtained. The method proposed here reduces the fabrication time by about 7 h and is helpful to improve the fabrication efficiency, precision and surface quality of SiC wafers. 2020, Chinese Lasers Press. All right reserved.
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64520]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai. Fast and High Quality Composite Processing Method for Silicon Carbide Wafers[J]. Guangxue Xuebao/Acta Optica Sinica,2020,40(13).
APA	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai.(2020).Fast and High Quality Composite Processing Method for Silicon Carbide Wafers.Guangxue Xuebao/Acta Optica Sinica,40(13).
MLA	C. Yang,F. Li,T. Ren,Y. Wei and Y. Bai."Fast and High Quality Composite Processing Method for Silicon Carbide Wafers".Guangxue Xuebao/Acta Optica Sinica 40.13(2020).

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