Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source

doi:10.1016/j.ceramint.2018.11.114

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	Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source
	R.Deng; J.L.Zhao; D.Y.Zhang; J.M.Qin; B.Yao; J.Song
刊名	Ceramics International
	2019
卷号	45 期号:4 页码:4392-4397
关键词	SnO2,Nanobelt,Nanowire,Li-doped ZnO,High-temperature high-pressure,method
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2018.11.114
英文摘要	We report an ultraviolet (UV) electroluminescence (EL) in n-SnO2/p-ZnO heterojunction light-emitting diodes with the nanostructural SnO2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO2 layer. Our results suggest that the nanostructural SnO2/ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63422]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	R.Deng,J.L.Zhao,D.Y.Zhang,et al. Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source[J]. Ceramics International,2019,45(4):4392-4397.
APA	R.Deng,J.L.Zhao,D.Y.Zhang,J.M.Qin,B.Yao,&J.Song.(2019).Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source.Ceramics International,45(4),4392-4397.
MLA	R.Deng,et al."Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source".Ceramics International 45.4(2019):4392-4397.