High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate | |
S.J.Zhou; H.H.Xu; B.Tang; Y.C.Liu; H.Wan; J.H.Miao | |
刊名 | Optics Express |
2019 | |
卷号 | 27期号:20页码:A1506-A1516 |
关键词 | wall-plug efficiency,extraction efficiency,enhancement,titanium,contact,stress,layer,films,Optics |
ISSN号 | 1094-4087 |
DOI | 10.1364/oe.27.0a1506 |
英文摘要 | High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon substrate were fabricated and characterized in this article. The metallization scheme reliability was improved by depositing the Pt/Ti films that surround the compressed Ag/TiW films to protect it from environmental humidity. We demonstrated that although current crowding in V-LEDs was not as severe as that in lateral light-emitting diodes (L-LEDs), high current density around the opaque metal n-electrode in V-LEDs remained a problem. A SiO2 current blocking layer (CBL) was incorporated in V-LEDs to modify the current distribution. Roughening the emitting surface of V-LEDs with KOH and H3PO4 etchant was compared and the influence of surface roughening on the emission property of V-LEDs was studied. The high-power V-LEDs showed low forward voltage with small series resistance and high light output power (LOP) without saturation up to 1300 mA. Under 350 mA injection current, V-LEDs achieved an excellent light output power (LOP) of 501 mW with the peak emission wavelength at 453 nm. The prominent output performance of V-LEDs demonstrated in this work confirmed that integrating the optimized metallization scheme, SiO2 CBL and surface texturing by KOH wet etching is an effective approach to higher performance V-LEDs. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/62731] |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | S.J.Zhou,H.H.Xu,B.Tang,et al. High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate[J]. Optics Express,2019,27(20):A1506-A1516. |
APA | S.J.Zhou,H.H.Xu,B.Tang,Y.C.Liu,H.Wan,&J.H.Miao.(2019).High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate.Optics Express,27(20),A1506-A1516. |
MLA | S.J.Zhou,et al."High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate".Optics Express 27.20(2019):A1506-A1516. |
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