1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment

doi:10.7567/apex.11.062203

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment
	Wang, K.; Yang, H. G.; Wang, X. Y.; Wang, Y. C.; Li, Z. Z.; Gao, J. B.; Li, B. R.; Gao, J. S.
刊名	Applied Physics Express
	2018
卷号	11 期号:6 页码:5
关键词	infrared-absorption optical-properties silicon pulses Physics
ISSN号	1882-0778
DOI	10.7567/apex.11.062203
英文摘要	We propose an etching treatment to improve the photoresponse of a femtosecond (fs)-laser-irradiated silicon photodiode working at 1064 nm. We investigated its surface structure and optical and electrical properties after fs laser irradiation, and further demonstrated the evolution of textured surface morphology, hyperdoping concentration, and crystallinity with etching time. We found that the etching treatment can peel off the hyperdoped layer by an appropriate amount, control the dopant concentration, and repair the crystallinity and subsurface damage of the hyperdoped microstructured silicon induced by fs laser irradiation. Experimental results indicate that the photoresponse at 1064nm can be enhanced from 0.2 to 0.45A/W after etching treatment. (C) 2018 The Japan Society of Applied Physics
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60858]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Wang, K.,Yang, H. G.,Wang, X. Y.,et al. 1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment[J]. Applied Physics Express,2018,11(6):5.
APA	Wang, K..,Yang, H. G..,Wang, X. Y..,Wang, Y. C..,Li, Z. Z..,...&Gao, J. S..(2018).1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment.Applied Physics Express,11(6),5.
MLA	Wang, K.,et al."1064 nm photoresponse enhancement of femtosecond-laser-irradiated Si photodiodes by etching treatment".Applied Physics Express 11.6(2018):5.