Controlled compensation via non-equilibrium electrons in ZnO

doi:10.1038/s41598-018-35178-w

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Controlled compensation via non-equilibrium electrons in ZnO
	Xie, X. H.; Li, B. H.; Zhang, Z. Z.; Wang, S. P.; Shen, D. Z.
刊名	Scientific Reports
	2018
卷号	8 页码:7
关键词	light-emitting-diodes growth emission polarity films Science & Technology - Other Topics
ISSN号	2045-2322
DOI	10.1038/s41598-018-35178-w
英文摘要	Doping wide-band-gap semiconductor with impurities always accompanied spontaneous compensation of opposite charged intrinsic defects, which lead to invalid control of the type of free carriers. We demonstrate an effectual route to overcoming such detrimental defects formation during doping by suppressing Fermi level shifting using non-equilibrium carriers gathering on the polar epitaxial surfaces. Non-equilibrium carriers are generated by ultraviolet light excited interband transitions (photon energy greater than bandgap). Because the p-type dopants are compensated by non-equilibrium electrons at metal-polar surfaces, donor-type native defects are inhibited. This new doping strategy provides an attractive solution to self-compensation problems in wide-band-gap semiconductors with spontaneous polarization of the future.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60597]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,et al. Controlled compensation via non-equilibrium electrons in ZnO[J]. Scientific Reports,2018,8:7.
APA	Xie, X. H.,Li, B. H.,Zhang, Z. Z.,Wang, S. P.,&Shen, D. Z..(2018).Controlled compensation via non-equilibrium electrons in ZnO.Scientific Reports,8,7.
MLA	Xie, X. H.,et al."Controlled compensation via non-equilibrium electrons in ZnO".Scientific Reports 8(2018):7.