A 150-to-1050 GHz Terahertz Detector in 65 nm CMOS

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	A 150-to-1050 GHz Terahertz Detector in 65 nm CMOS
	Liu ZY(刘朝阳)1,2,3; Qi F(祁峰)1,2,3; Wang YL(汪业龙)1,2,3; Liu PX(刘鹏翔)1,2,3; Li WF(李惟帆)1,2,3
	2021
会议日期	November 7-10, 2021
会议地点	Busan, SOUTH KOREA
页码	1-3
英文摘要	Terahertz (THz) band refers to electromagnetic radiation that lies in the frequency range of 0.1-10 THz. THz wave has many unique characteristics, which makes it have a wide application prospect in security check, astronomy, material analysis, radar, and communication. In recent years, CMOS THz detectors have been widely studied for their high sensitivity, fast response, and compactness. Large-scale THz focal-plane arrays with integrated signal processing circuits have been developed in [1–3]. However, most of existing CMOS THz detectors can only achieve narrow-band detection. Conventional CMOS THz detectors use one antenna to receive THz radiation, difficult to achieve a good impedance match between antenna and transistors in a wide frequency range, which limits their detection bandwidth [1–5]. This paper proposes a broadband detection structure by combining several narrow-band THz detectors with different detection frequencies. It is implemented in a 65 nm CMOS process and has been verified from 150 to 500 GHz and 665 to 1050 GHz.
产权排序	1
会议录	2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)
会议录出版者	IEEE
会议录出版地	New York
语种	英语
ISBN号	978-1-6654-4350-0
WOS记录号	WOS:000768220800094
内容类型	会议论文
源URL	[http://ir.sia.cn/handle/173321/30748]
专题	沈阳自动化研究所_光电信息技术研究室
通讯作者	Qi F(祁峰)
作者单位	1.Institutes for Robotics and Intelligent Manufacturing, Chinese Academy of Sciences, Shenyang, China 2.Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China 3.Key Laboratory of Opto-Electronic Information Processing, Chinese Academy of Sciences, Shenyang, China
推荐引用方式 GB/T 7714	Liu ZY,Qi F,Wang YL,et al. A 150-to-1050 GHz Terahertz Detector in 65 nm CMOS[C]. 见:. Busan, SOUTH KOREA. November 7-10, 2021.