Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures | |
Li M(李萌)1,3; Shi HY(石慧瑶)1; Jin, Xiaoshi3; Wang, Lu2; Liu, Xi3; Wu, Meile3 | |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2021 | |
卷号 | 36期号:9页码:1-5 |
关键词 | MoS2 pressure effect electrical properties |
ISSN号 | 0268-1242 |
产权排序 | 1 |
英文摘要 | MoS2; pressure effect; electrical properties |
资助项目 | 2019 Science Research Fund Project of Liaoning Provincial Department of Education[LQGD2019015] ; 2019 Science Research Fund Project of Liaoning Provincial Department of Education[LJGD2019016] ; 2020 Liaoning Provincial Natural Science Foundation[2020-BS-144] ; China Post-doctoral Science Foundation[2020M680040] |
WOS关键词 | ELECTRONIC-PROPERTIES |
WOS研究方向 | Engineering ; Materials Science ; Physics |
语种 | 英语 |
WOS记录号 | WOS:000676027200001 |
资助机构 | 2019 Science Research Fund Project of Liaoning Provincial Department of Education [LQGD2019015, LJGD2019016] ; 2020 Liaoning Provincial Natural Science Foundation [2020-BS-144] ; China Post-doctoral Science FoundationChina Postdoctoral Science Foundation [2020M680040] |
内容类型 | 期刊论文 |
源URL | [http://ir.sia.cn/handle/173321/29359] |
专题 | 沈阳自动化研究所_机器人学研究室 |
通讯作者 | Wu, Meile |
作者单位 | 1.State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China 2.Liaoning equipment manufacturing Vocational and Technical College, Shenyang 110161, China 3.College of Information Science and Engineering, Shenyang University of Technology, Shenyang, China |
推荐引用方式 GB/T 7714 | Li M,Shi HY,Jin, Xiaoshi,et al. Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(9):1-5. |
APA | Li M,Shi HY,Jin, Xiaoshi,Wang, Lu,Liu, Xi,&Wu, Meile.(2021).Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(9),1-5. |
MLA | Li M,et al."Research on the oxygen and humidity related-electrical behavior of monolayer MoS2 under vacuum to normal pressures".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.9(2021):1-5. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论