The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence

	The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence
	H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang
刊名	Superlattices and Microstructures
	2019
卷号	133 页码:106177
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29522]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang. The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence[J]. Superlattices and Microstructures,2019,133:106177.
APA	H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang.(2019).The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence.Superlattices and Microstructures,133,106177.
MLA	H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang."The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence".Superlattices and Microstructures 133(2019):106177.