| Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer | |
| Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du | |
| 刊名 | PHYSICAL REVIEW B
 |
| 2019 | |
| 卷号 | 100页码:165309 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29384]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du. Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer[J]. PHYSICAL REVIEW B,2019,100:165309. |
| APA | Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du.(2019).Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer.PHYSICAL REVIEW B,100,165309. |
| MLA | Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du."Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer".PHYSICAL REVIEW B 100(2019):165309. |
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