High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy

	High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
	Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu
刊名	Chinese Physics B
	2019
卷号	28 期号:2 页码:028503
语种	英语
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29476]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy[J]. Chinese Physics B,2019,28(2):028503.
APA	Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu.(2019).High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy.Chinese Physics B,28(2),028503.
MLA	Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu."High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy".Chinese Physics B 28.2(2019):028503.