| Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4 | |
| Li, S (Li, Si); Wu, WK (Wu, Weikang); Feng, XL (Feng, Xiaolong); Guan, S (Guan, Shan); Feng, WX (Feng, Wanxiang); Yao, YG (Yao, Yugui); Yang, SA (Yang, Shengyuan A.) | |
| 刊名 | PHYSICAL REVIEW B
 |
| 2020 | |
| 卷号 | 102页码:235435 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29983]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, S . Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4[J]. PHYSICAL REVIEW B,2020,102:235435. |
| APA | Li, S .(2020).Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4.PHYSICAL REVIEW B,102,235435. |
| MLA | Li, S ."Valley-dependent properties of monolayer MoSi2N4, WSi2N4, and MoSi2As4".PHYSICAL REVIEW B 102(2020):235435. |
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