| Unsaturated linear magnetoresistance effect in high-quality free-standing InSb single-crystal nanosheets | |
| Shucheng Tong ; Dong Pan ; Xiaolei Wang ; Zhifeng Yu ; Yaohan Xu ; Dahai Wei | |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 2020 | |
| 卷号 | 53期号:18页码:18LT04 |
| 公开日期 | 2020 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30336]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Shucheng Tong ; Dong Pan ; Xiaolei Wang ; Zhifeng Yu ;Yaohan Xu ; Dahai Wei. Unsaturated linear magnetoresistance effect in high-quality free-standing InSb single-crystal nanosheets[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53(18):18LT04. |
| APA | Shucheng Tong ; Dong Pan ; Xiaolei Wang ; Zhifeng Yu ;Yaohan Xu ; Dahai Wei.(2020).Unsaturated linear magnetoresistance effect in high-quality free-standing InSb single-crystal nanosheets.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53(18),18LT04. |
| MLA | Shucheng Tong ; Dong Pan ; Xiaolei Wang ; Zhifeng Yu ;Yaohan Xu ; Dahai Wei."Unsaturated linear magnetoresistance effect in high-quality free-standing InSb single-crystal nanosheets".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53.18(2020):18LT04. |
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