| Valley-Layer Coupling: A New Design Principle for Valleytronics | |
| Zhi-Ming Yu; Shan Guan; Xian-Lei Sheng; Weibo Gao; Shengyuan A. Yang | |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 2020 | |
| 卷号 | 124期号:3页码:037701 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30636]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhi-Ming Yu; Shan Guan;Xian-Lei Sheng; Weibo Gao; Shengyuan A. Yang. Valley-Layer Coupling: A New Design Principle for Valleytronics[J]. PHYSICAL REVIEW LETTERS,2020,124(3):037701. |
| APA | Zhi-Ming Yu; Shan Guan;Xian-Lei Sheng; Weibo Gao; Shengyuan A. Yang.(2020).Valley-Layer Coupling: A New Design Principle for Valleytronics.PHYSICAL REVIEW LETTERS,124(3),037701. |
| MLA | Zhi-Ming Yu; Shan Guan;Xian-Lei Sheng; Weibo Gao; Shengyuan A. Yang."Valley-Layer Coupling: A New Design Principle for Valleytronics".PHYSICAL REVIEW LETTERS 124.3(2020):037701. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论