Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content

	Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content
	Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou
刊名	ADVANCED ELECTRONIC MATERIALS
	2021
卷号	7 期号:12 页码:2100528
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30789]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou. Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(12):2100528.
APA	Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou.(2021).Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content.ADVANCED ELECTRONIC MATERIALS,7(12),2100528.
MLA	Bekele, Zelalem Abebe; Li, Runze; Li, Yucai; Cao, Yi; Liu, Xionghua; Wang, Kaiyou."Tuning the High-Efficiency Field-Free Current-Induced Deterministic Switching via Ultrathin PtMo Layer with Mo Content".ADVANCED ELECTRONIC MATERIALS 7.12(2021):2100528.